Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility
Author:
Affiliation:
1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
Funder
Murata Science Foundation
Precursory Research for Embryonic Science and Technology
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5084191
Reference40 articles.
1. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
2. Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si
3. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
4. Germanium CMOS potential from material and process perspectives: Be more positive about germanium
5. Academic and industry research progress in germanium nanodevices
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