n-Type Polycrystalline Germanium Layers Formed by Impurity-Doped Solid-Phase Growth-Reference-Cited by-同舟云学术

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n-Type Polycrystalline Germanium Layers Formed by Impurity-Doped Solid-Phase Growth

Published:2023-01-03 Issue:3 Volume:5 Page:1444-1450
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Nozawa Koki¹,Nishida Takeshi¹,Ishiyama Takamitsu¹,Suemasu Takashi¹,Toko Kaoru¹^ORCID

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tsukuba, Ibaraki305-8573, Japan

Funder

New Energy and Industrial Technology Development Organization

Ministry of Education, Culture, Sports, Science and Technology

Yazaki Memorial Foundation for Science and Technology

TEPCO Memorial Foundation

JACI Prize for Encouraging Young Researcher

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01381

Reference64 articles.

1. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

2. Drift Mobilities in Semiconductors. I. Germanium

3. Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

4. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

5. Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

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1. Semantic segmentation in crystal growth process using fake micrograph machine learning;Scientific Reports;2024-08-21

2. High Doping Activation (≥10²⁰ cm^–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing;ACS Applied Electronic Materials;2024-06-03

3. Kinetic study of GeO amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy;Journal of Non-Crystalline Solids;2024-05

4. Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review;Advanced Electronic Materials;2024-05

5. Prediction and Elucidation of Physical Properties of Polycrystalline Materials Using Multichannel Machine Learning of Electron Backscattering Diffraction;Advanced Electronic Materials;2024-04-09

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