Kinetic study of GeO amorphous film disproportionation into a-Ge nanoclusters / GeO2 system using Raman and infrared spectroscopy

Author:

Zhang FanORCID,Volodin V.A.,Astankova K.N.,Shvets P.V.,Goikhman A.Yu.,Vergnat M.

Funder

Russian Science Foundation

Ministry of Education and Science of the Russian Federation

Publisher

Elsevier BV

Reference37 articles.

1. Physics of Semiconductor Devices;Sze,1981

2. Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate;Shang;IEEE Electron. Device Lett.,2004

3. High-k/Ge MOSFETs for future nanoelectronics;Kamata;Mater. Today,2008

4. Enhancement of electrical performance of Ge-based metal-oxide-semiconductor capacitor via formation of trigonal-Sm2O3;Mozaffor;Surf. Interfaces,2021

5. Resistive switching in non-stoichiometric germanosilicate glass films containing Ge nanoclusters;Volodin;Electronics,2020

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