Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications-Reference-Cited by-同舟云学术

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Low temperature metal induced crystallization of orientation-preferred polycrystalline germanium with n- and p-type doping for device applications

Published:2024-06 Issue: Volume:989 Page:174380
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

An Yuying,Qian Kun,Jiao Jinlong,Wu Songsong,Qian Jinhui,Wu Qiang,Wang Jianyuan,Xu Jianfang,Lin Guangyang,Huang Wei,Chen Songyan,Li Cheng

Funder

National Key Research and Development Program of China Stem Cell and Translational Research

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference36 articles.

1. Laser synthesis of germanium tin alloys on virtual germanium;Stefanov;Appl. Phys. Lett.,2012

2. Material Characterization of Ge(1-x)Snx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications;Mosleh;J. Electron. Mater.,2014

3. Lasing in direct-bandgap GeSn alloy grown on Si;Wirths;Nat. Photonics,2015

4. GeSn/SiGeSn heterostructure and multi quantum well lasers;Stange;ACS Photonics,2018

5. Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing;Lin;J. Alloy. Compd.,2022

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