Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes-Reference-Cited by-同舟云学术

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Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes

Published:2015 Issue:37 Volume:7 Page:15099-15105
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Park Ah Hyun,Seo Tae Hoon,Chandramohan S.,Lee Gun Hee,Min Kyung Hyun,Lee Seula,Kim Myung Jong,Hwang Yong Gyoo,Suh Eun-Kyung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04239A

Reference45 articles.

1. Blue Light: A Fascinating Journey (Nobel Lecture)

2. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

3. Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)

4. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

5. Stress-relaxed growth of n-GaN epilayers

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