Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference16 articles.
1. Current Status of GaN-Based Solid-State Lighting
2. Transcending the replacement paradigm of solid-state lighting
3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
4. Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
5. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
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