Ultrathin GaN Film Derived from Amorphous Ga2O3 Film
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11595-024-2941-3.pdf
Reference20 articles.
1. Chen KJ, Haeberlen O, Lidow A, et al. GaN-on-Si Power Technology: Devices and Applications[J]. IEEE Transactions on Electron Devices, 2017, 64(3): 779–795
2. Reshchikov MA, Morkoc H. Luminescence from Defects in GaN[J]. Physical B-Condensed Matter, 2006, 376: 428–431
3. Flack TJ, Pushpakaran BN, Bayne SB. GaN Technology for Power Electronic Applications: A Review[J]. Journal of Electronic Materials, 2016, 45(6): 2673–2682
4. Jiang H, Su Y, Zhu J, et al. Piezoelectric and Pyroelectric Properties of Intrinsic GaN Nanowires and Nanotubes: Size and Shape Effects[J]. Nano Energy, 2018, 45: 359–367
5. Liu B, Yang W, Li J, et al. Template Approach to Crystalline GaN Nanosheets[J]. Nano Letters, 2017, 17(5): 3195–3201
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