Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)-Reference-Cited by-同舟云学术

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Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)

Published:2015-06-01 Issue:27 Volume:54 Page:7764-7769
ISSN:1433-7851
Container-title:Angewandte Chemie International Edition
language:en
Short-container-title:Angew. Chem. Int. Ed.

Author:

Amano Hiroshi

Publisher

Wiley

Subject

General Chemistry,Catalysis

Reference61 articles.

1. http://gaming.wikia.com/wiki/History_of_handheld_game_consoles

2. http://en.wikipedia.org/wiki/Mobile_phone

3. Luminescence conversion of blue light emitting diodes

4. http://news.bbc.co.uk/2/hi/business/5085630.stm

5. http://www.notablebiographies.com/Ho-Jo/Jobs-Steve.html

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