Influence of well position on the electroluminescence characteristics of InGaN/GaN single quantum well red light-emitting diodes
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference36 articles.
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4. InGaN/GaN red-amber-yellow light-emitting diodes on triangular-striped Si (100) substrate;Wang;J. Mater. Sci.,2019
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