Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study
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SPIE
Reference19 articles.
1. Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
2. Effects of an Asymmetric Barrier Layer on the Structural and Optical Properties of InGaN LEDs
3. Recent Progress in Micro‐LED‐Based Display Technologies
4. Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength
5. Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
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