Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=8/a=081002/pdf
Reference19 articles.
1. III-Nitride Based Light Emitting Diodes and Applications
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5. Origin of efficiency droop in GaN-based light-emitting diodes
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