Affiliation:
1. Hong Kong University of Science and Technology Hong Kong China
2. Southern University of Science and Technology Shenzhen China
3. Shenzhen Sitan Technology Co., Ltd. Shenzhen China
Abstract
In this paper, the gallium nitride (GaN) based Micro‐LED was
fabricated based on a self‐aligned process with hydroxide
treatment and ALD passivation from 100 μm down to 3 μm. The
different current spreading performance was characterized based
on the series resistance analysis. Then the size‐dependent carrier
concentration profile was demonstrated via the capacitancevoltage
measurement, identifying the various carrier injection
behavior by different size. Finally, the external quantum
efficiency and luminance versus current density dependence for
array device and the single device was compared, revealing a
higher efficiency at lower current density for array device, which
is favorable for display application.