Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate-Reference-Cited by-同舟云学术

Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate

Published:2021-09-01 Issue:9 Volume:14 Page:092011
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Dussaigne Amelie^ORCID,Le Maitre Patrick,Haas Helge,Pillet Jean-Christophe,Barbier Frederic,Grenier Adeline,Michit Nicolas,Jannaud Audrey,Templier Roselyne,Vaufrey David,Rol Fabian,Ledoux Olivier,Sotta David

Funder

Important Project of Common European Interest

Butterfly FUI project

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ac1b3e/pdf

Reference17 articles.

1. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application

2. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

3. Development of InGaN-based red LED grown on (0001) polar surface

4. Compositional pulling effects inInxGa1−xN/GaNlayers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study

5. Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies on suppressed surface recombination of InGaN-based red light-emitting diodes with V-pits;Applied Surface Science;2024-11

2. Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN;Acta Materialia;2024-09

3. Challenges of high-yield manufacture in micro-light-emitting diodes displays: chip fabrication, mass transfer, and detection;Journal of Physics D: Applied Physics;2024-08-28

4. Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective;APL Materials;2024-08-01

5. Enhancing the performance of InGaN-based near-infrared light-emitting diodes under a weakly polarized electric field;Applied Optics;2024-07-01