Zn1−xMgxTe and P:Zn1−xMgxTe (x = 0.06–0.25) bulk crystals grown by travelling Te solution method-Reference-Cited by-同舟云学术

Zn_1−xMg_xTe and P:Zn_1−xMg_xTe (x = 0.06–0.25) bulk crystals grown by travelling Te solution method

Published:2024 Issue:17 Volume:26 Page:2277-2286
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Song Yuchen¹^ORCID,Zhang Tingting¹^ORCID,Lv Jiahui¹,Zhang Guorong¹,Liu Changyou¹^ORCID,Wang Tao¹^ORCID,Zha Gangqiang¹²,Jie Wanqi¹

Affiliation:

1. State Key Laboratory of Solidification Processing, MIIT Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China

2. Qingdao Research Institute, Northwestern Polytechnical University, Qingdao, 266200, P. R. China

Abstract

Zn1−xMgxTe and P:Zn1−xMgxTe (x = 0.06–0.25) bulk crystals were successfully grown by travelling Te solution method. The segregation of Mg with the growth of crystal is weaken and the as-grown crystal has high homogeneity.

Funder

National Natural Science Foundation of China

Natural Science Basic Research Program of Shaanxi Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00081A

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