Causes of ferroelectricity in HfO2-based thin films: an ab initio perspective-Reference-Cited by-同舟云学术

Causes of ferroelectricity in HfO2-based thin films: an ab initio perspective

Published:2019 Issue:23 Volume:21 Page:12150-12162
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Dogan Mehmet¹²³⁴⁵^ORCID,Gong Nanbo¹²³⁴⁶^ORCID,Ma Tso-Ping¹²³⁴⁶,Ismail-Beigi Sohrab¹²³⁴⁵^ORCID

Affiliation:

1. Center for Research on Interface Structures and Phenomena

2. Yale University

3. New Haven

4. USA

5. Department of Physics

6. Department of Electrical Engineering

Abstract

The combined effects of doping and biaxial strain explain the transformation of HfO₂ grains into the ferroelectric phase observed during thermal annealing.

Funder

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP01880H

Reference56 articles.

1. Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide

2. Ferroelectric Field Effect Transistors for Memory Applications

3. Engineered Unique Elastic Modes at aBaTiO3/(2×1)−Ge(001)Interface

4. Single Atomic Layer Ferroelectric on Silicon

5. Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

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