Effects of electrodes on antiferroelectricity and fatigue endurance of Hf0.2Zr0.8O2 thin films

Author:

Li Dawei12ORCID,Liu Hongbo1ORCID,Chen Luqiu2ORCID,Shen Yu2,Feng Guangdi2,Hao Shenglan2ORCID,Yang Zhenzhong2ORCID,Zhu Qiuxiang2ORCID,Qu Ke2ORCID,Tian Bobo2ORCID,Chu Junhao2,Duan Chungang23ORCID

Affiliation:

1. School of Materials Science and Engineering, Shanghai University of Engineering Science 1 , Shanghai 201620, China

2. Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University 2 , Shanghai 200241, China

3. Collaborative Innovation Center of Extreme Optics, Shanxi University 3 , Shanxi 030006, China

Abstract

The influence of electrodes on antiferroelectricity and fatigue endurance of 15 nm thick Hf0.2Zr0.8O2 thin films has been studied by a metal–antiferroelectric–metal capacitor structure using TiN and W as electrodes. The W|Hf0.2Zr0.8O2|W capacitor shows significantly enhanced antiferroelectricity and better endurance compared to the capacitor using TiN as the electrode. Assisted by grazing incidence x-ray diffraction and scanning transmission electron microscopy, the different electrical properties are discussed based on the contents of different phases and the diffusion of oxygen from the thin film into electrodes.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Shanghai Municipality

Publisher

AIP Publishing

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