Field‐Induced Ferroelectric Hf 1‐ x Zr x O 2 Thin Films for High‐ k Dynamic Random Access Memory-Reference-Cited by-同舟云学术

Field‐Induced Ferroelectric Hf 1‐ x Zr x O 2 Thin Films for High‐ k Dynamic Random Access Memory

Published:2020-10-04 Issue:11 Volume:6 Page:2000631
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Hyun Seung Dam¹,Park Hyeon Woo¹,Park Min Hyuk²,Lee Young Hwan¹,Lee Yong Bin¹,Kim Beom Yong¹,Kim Ho Hyun¹,Kim Baek Su¹,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 151‐744 Republic of Korea

2. School of Materials Science and Engineering Pusan National University 2, Busandaehak‐ro 63 beon‐gil Geumjeong‐gu Busan 46241 Republic of Korea

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000631

Reference33 articles.

1. Prospective of Semiconductor Memory Devices: from Memory System to Materials

2. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

3. Future of dynamic random-access memory as main memory

4. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

5. Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film

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