Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film-Reference-Cited by-同舟云学术

Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film

Published:2014-11-25 Issue:23 Volume:6 Page:21632-21637
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jeon Woojin¹,Yoo Sijung¹,Kim Hyo Kyeom¹,Lee Woongkyu¹,An Cheol Hyun¹,Chung Min Jung¹,Cho Cheol Jin¹²,Kim Seong Keun²,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea

2. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am506677e

Reference28 articles.

1. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

2. Atomic Layer Deposition for Semiconductors

3. Band offsets of wide-band-gap oxides and implications for future electronic devices

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