Affiliation:
1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
Abstract
BexMg1−xO ultra-thin dielectric films, deposited via super-cycle ALD and controlled sub-cycle ratio, show a POT of 3.7 nm, an EOT of 1.3 nm, and low leakage current, suitable for dynamic random access memory.
Funder
Korea Evaluation Institute of Industrial Technology
Publisher
Royal Society of Chemistry (RSC)
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