Single Atomic Layer Ferroelectric on Silicon-Reference-Cited by-同舟云学术

Single Atomic Layer Ferroelectric on Silicon

Published:2017-12-26 Issue:1 Volume:18 Page:241-246
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Dogan Mehmet,Fernandez-Peña Stéphanie¹,Kornblum Lior,Jia Yichen^ORCID,Kumah Divine P.,Reiner James W.,Krivokapic Zoran²,Kolpak Alexie M.³,Ismail-Beigi Sohrab^ORCID,Ahn Charles H.,Walker Frederick J.^ORCID

Affiliation:

1. Department of Quantum Matter Physics, Université de Genève, Genève 1211, Switzerland

2. GLOBALFOUNDRIES, Santa Clara, California 95054, United States

3. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b03988

Reference51 articles.

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2. Atomically Engineered Oxide Interfaces

3. Crystalline Oxides on Silicon

4. Ross, I. M.; U.S. Patent No. 2,791,760, 1957.

5. A new solid state memory resistor

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