Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2thin films-Reference-Cited by-同舟云学术

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Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2thin films

Published:2016 Issue:29 Volume:8 Page:13898-13907
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Park Min Hyuk,Kim Han Joon,Lee Young Hwan,Kim Yu Jin,Moon Taehwan,Kim Keum Do,Hyun Seung Dam,Hwang Cheol Seong

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2016/NR/C5NR08346J

Reference36 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

3. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

4. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

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