Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers-Reference-Cited by-同舟云学术

Understanding phase evolution of ferroelectric Hf_0.5Zr_0.5O₂ thin films with Al₂O₃ and Y₂O₃ inserted layers

Published:2024 Issue:14 Volume:12 Page:5035-5046
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shin Jonghoon¹,Seo Haengha¹,Ye Kun Hee¹²,Jang Yoon Ho¹,Kwon Dae Seon¹,Lim Junil¹,Kim Tae Kyun¹,Paik Heewon¹,Song Haewon¹,Kim Ha Ni¹,Byun Seungyong¹,Shin Seong Jae¹,Kim Kyung Do¹,Lee Yong Bin¹,Lee In Soo¹,Choi Jung-Hae²^ORCID,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea

2. Center for Electronic Materials, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea

Abstract

This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD).

Funder

Korea Evaluation Institute of Industrial Technology

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00061G

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