Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO<sub>2</sub> thin films-Reference-Cited by-同舟云学术

Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO₂ thin films

Published:2024 Issue: Volume: Page:
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shin Jonghoon¹,Shin Dong Hoon¹,Do Kim Kyung¹,Seo Haengha¹,Ye Kun Hee¹²,Jeon Jeong Woo¹^ORCID,Kim Tae Kyun¹,Paik Heewon¹,Song Haewon¹,Lee Suk Hyun¹,Choi Jung-Hae²^ORCID,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea

2. Center for Electronic Materials, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea

Abstract

This study investigates the effects of field-cycling on the critical electric fields of the field-induced ferroelectric effect in atomic layer deposited ZrO2 thin films, focusing on their reversibility and temperature dependence.

Funder

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC03024A

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4. Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

5. Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling