High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer-Reference-Cited by-同舟云学术

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High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

Published:2016-07-14 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Muhammed M. M.,Roldan M. A.,Yamashita Y.,Sahonta S.-L.,Ajia I. A.,Iizuka K.,Kuramata A.,Humphreys C. J.,Roqan I. S.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep29747.pdf

Reference49 articles.

1. M. Kneissl et al. Advances in group III-nitride-based deep UV light-emitting diode technology. Semiconductor Science and Technology 26, 014036 (2011).

2. C. J. Neufeld et al. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap. Applied Physics Letters 93, 143502 (2008).

3. U. K. Mishra, L. Shen, T. E. Kazior & Y. F. Wu . GaN-Based RF power devices and amplifiers. Proceedings of the Ieee. 96, 287–305 (2008).

4. Z. Wan et al. Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate. Thin Solid Films 546, 104–107 (2013).

5. J.-C. Song et al. Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0 0 0 1). Journal of Crystal Growth 308, 321–324 (2007).

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