High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2988894
Reference21 articles.
1. InGaN Single-Quantum-Well LEDs
2. GaN Electronics
3. Simulation of In0.65Ga0.35N single-junction solar cell
4. Design and characterization of GaN∕InGaN solar cells
5. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
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