Enhancing the mechanical strength of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>β</mml:mi></mml:math> - <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math> with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Al</mml:mi></mml:math> alloying-Reference-Cited by-同舟云学术

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Enhancing the mechanical strength of β - Ga2O3 with Al alloying

Published:2024-06-14 Issue:6 Volume:21 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Yan Yuchao¹¹,Li Cheng¹²,Xia Ning²,Deng Tianqi¹¹^ORCID,Zhang Hui¹¹,Yang Deren¹¹

Affiliation:

1. Zhejiang University

2. Hangzhou Garen Semiconductor Company Limited

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

National Postdoctoral Program for Innovative Talents

Sun Yat-sen University

“Pioneer” and “Leading Goose” R&D Program of Zhejiang

Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.21.064036/fulltext

Reference55 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Vacuum Annealed β-Ga₂O₃ Recess Channel MOSFETs With 8.56 kV Breakdown Voltage

3. 10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

4. Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

5. Lateral 1.8 kV $\beta$ -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit

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