Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate-Reference-Cited by-同舟云学术

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Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate

Published:2013-11 Issue: Volume:546 Page:104-107
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Wan Zhixin,He Yinsheng,Choi Cheljong,Suh Eunkyung,Yu Young Moon,Yi Sam-Nyung,Ahn Hyung-Soo,Yang Min,Lee Hyo-Jong,Shin Keesam

Funder

Industrial Strategic Technology Development Program

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

2. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

3. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films

4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

5. Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique

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1. Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs;Micromachines;2019-05-13

2. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer;Scientific Reports;2016-07-14

3. Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates;Scientific Reports;2015-03-23

4. Achieve high-quality InGaN/GaN multiple quantum wells on La0.3Sr1.7AlTaO6 substrates;Materials Letters;2014-08

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