Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array-Reference-Cited by-同舟云学术

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array

Published:2022-05-23 Issue:22 Volume:14 Page:25710-25721
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xue Qi¹,Peng Yan¹,Cao Liang¹,Xia Yuanyuan¹,Liang Jianghu¹,Chen Chun-Chao¹^ORCID,Li Ming¹,Hang Tao¹^ORCID

Affiliation:

1. State Key Laboratory of Metal Matrix Composites, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, People’s Republic of China

Funder

National Natural Science Foundation of China

Basic Research Project of Science and Technology of Shanghai

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c03978

Reference51 articles.

1. Memristive switching mechanism for metal/oxide/metal nanodevices

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5. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

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