Investigating the Effects of $\mathrm{V}_{2}\mathrm{C}$ MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO2-Based Memristors
Author:
Affiliation:
1. College of Electronic and Optical Engineering, College of Flexible Electronics (Future Technology), and College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications,Nanjing,China,210023
Funder
Chinese Ministry of Science and Technology
Ministry of Science and Technology
Postgraduate Research and Practice Innovation Program of Jiangsu Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/9970761/10669734/10669740.pdf?arnumber=10669740
Reference36 articles.
1. Artificial synapse arrays based on SiOx/TiOx memristive crossbar with high uniformity for neuromorphic computing
2. CdSe Quantum Dot-Based Nanocomposites for Ultralow-Power Memristors
3. Reversible Transition of Volatile and Nonvolatile Switching in Ag–In–Zn–S Quantum Dot-Based Memristors with Low Power Consumption for Synaptic Applications
4. High performance and low power consumption resistive random access memory with Ag/Fe2O3/Pt structure
5. Coexistence of Nonvolatile WORM, Bipolar, Unipolar, and Volatile Resistive Switching Characteristics in a Dry Oxide Layer With Ag Conductive Bridges
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