Coexistence of Nonvolatile WORM, Bipolar, Unipolar, and Volatile Resistive Switching Characteristics in a Dry Oxide Layer With Ag Conductive Bridges
Author:
Affiliation:
1. Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliu, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09842375.pdf?arnumber=9842375
Reference48 articles.
1. Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices
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5. Oxide nanolayer improving RRAM operational performance
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