Reversible Transition of Volatile and Nonvolatile Switching in Ag–In–Zn–S Quantum Dot-Based Memristors with Low Power Consumption for Synaptic Applications-Reference-Cited by-同舟云学术

Reversible Transition of Volatile and Nonvolatile Switching in Ag–In–Zn–S Quantum Dot-Based Memristors with Low Power Consumption for Synaptic Applications

Published:2021-02-09 Issue:3 Volume:4 Page:2365-2374
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

He Nan¹^ORCID,Tao Langyi¹,Zhang Qiangqiang¹,Liu Xiaoyan¹,Lian Xiaojuan¹,Wan Xiang¹^ORCID,Hu Er-Tao¹^ORCID,He Lin¹,Sheng Yang²^ORCID,Xu Feng¹,Tong Yi¹

Affiliation:

1. College of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, China

2. Jiangsu Key Laboratory of Environmentally Friendly Polymeric Materials, School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

NJUPTSF

Jiangsu Province Research Foundation

Postgraduate Research & Practice Innovation Program of Jiangsu Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c03180