Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V<sub>2</sub>O<sub>5</sub> Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing-Reference-Cited by-同舟云学术

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Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V₂O₅ Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing

Published:2024-06-06 Issue:6 Volume:6 Page:4548-4559
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kaushlendra Kumar¹^ORCID,Kaur Davinder¹^ORCID

Affiliation:

1. Functional Nanomaterials Research Laboratory (FNRL), Department of Physics and Centre for Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, Uttarakhand, India

Funder

Science and Engineering Research Board

Shastri Indo-Canadian Institute

Defence Research and Development Organisation

Ministry of Education, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00584

Reference64 articles.

1. ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses

2. Reliability of analog resistive switching memory for neuromorphic computing

3. Nanoscale resistive switching devices: mechanisms and modeling

4. Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array

5. Electric and Light Dual-Gate Tunable MoS2 Memtransistor

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