Electric and Light Dual-Gate Tunable MoS2 Memtransistor-Reference-Cited by-同舟云学术

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Electric and Light Dual-Gate Tunable MoS2 Memtransistor

Published:2019-10-29 Issue:46 Volume:11 Page:43344-43350
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yin Siqi,Song Cheng^ORCID,Sun Yiming,Qiao Leilei,Wang Bolun,Sun Yufei,Liu Kai^ORCID,Pan Feng,Zhang Xiaozhong

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Beijing Innovation Center for Future Chip

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b14259

Reference39 articles.

1. Tunnel Field-Effect Transistors: State-of-the-Art

2. The missing memristor found

3. How we predicted the memristor

4. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

5. Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies

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