Effect of Al Electronic Configuration on the SiO2 Thin Film Growth via Catalytic Self-Assembling Deposition
Author:
Affiliation:
1. Sustainable Energy Laboratory, China University of Geosciences Wuhan, 388 Lumo Road, Wuhan 430074, China
2. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp405847r
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1. Submicrometer Ultralow-Power TFT With 1.8 nm NAOS $ \hbox{SiO}_{2}/\hbox{20} \ \hbox{nm}$ CVD $\hbox{SiO}_{2}$ Gate Stack Structure
2. Correlation Between Film Properties and Anhydrous HF Vapor Etching Behavior of Silicon Oxide Deposited by CVD Methods
3. Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology
4. Infrared Study of Tris(dimethylamino)silane Adsorption and Ozone Irradiation on Si(100) Surfaces for ALD of SiO[sub 2]
5. Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)2]2 and SiH[N(CH3)2]3 precursors
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