Submicrometer Ultralow-Power TFT With 1.8 nm NAOS $ \hbox{SiO}_{2}/\hbox{20} \ \hbox{nm}$ CVD $\hbox{SiO}_{2}$ Gate Stack Structure-Reference-Cited by-同舟云学术

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Submicrometer Ultralow-Power TFT With 1.8 nm NAOS $ \hbox{SiO}_{2}/\hbox{20} \ \hbox{nm}$ CVD $\hbox{SiO}_{2}$ Gate Stack Structure

Published:2011-04 Issue:4 Volume:58 Page:1134-1140
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kubota Yasushi,Matsumoto Taketoshi,Imai Shigeki,Yamada Mikihiro,Tsuji Hiroshi,Taniguchi Kenji,Terakawa Sumio,Kobayashi Hikaru

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5737855/05723735.pdf?arnumber=5723735

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Atomic Layer Deposition of Device-Quality SiO2 Thin Films under 100 °C Using an Aminodisilane Precursor;Chemistry of Materials;2019-07-22

2. Dynamic Chemically Driven Dewetting, Spreading, and Self-Running of Sessile Droplets on Crystalline Silicon;Langmuir;2016-11-21

3. Ultra-Low Power Poly-Si TFTs with 10 nm Stacked Gate Oxide Fabricated by Nitric Acid Oxidation of Silicon (NAOS) Method;ECS Journal of Solid State Science and Technology;2015

4. Improvement of Minority Carrier Lifetime and Si Solar Cell Characteristics by Nitric Acid Oxidation Method;ECS Journal of Solid State Science and Technology;2014

5. Effect of Al Electronic Configuration on the SiO2 Thin Film Growth via Catalytic Self-Assembling Deposition;The Journal of Physical Chemistry C;2013-10-28

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