Infrared Study of Tris(dimethylamino)silane Adsorption and Ozone Irradiation on Si(100) Surfaces for ALD of SiO[sub 2]-Reference-Cited by-同舟云学术

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Infrared Study of Tris(dimethylamino)silane Adsorption and Ozone Irradiation on Si(100) Surfaces for ALD of SiO[sub 2]

Published:2007 Issue:10 Volume:10 Page:G80
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kinoshita Yuta,Hirose Fumihiko,Miya Hironobu,Hirahara Kazuhiro,Kimura Yasuo,Niwano Michio

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference14 articles.

1. Mechanism of atomic layer deposition of SiO2 on the silicon (100)-2×1 surface using SiCl4 and H2O as precursors

2. ALD of SiO[sub 2] at Room Temperature Using TEOS and H[sub 2]O with NH[sub 3] as the Catalyst

3. Comparison Between Hf-Silicate Films Deposited by ALD with BDMAS [SiH[sub 2](N(CH[sub 3])[sub 2])[sub 2]] and TDMAS [SiH(N(CH[sub 3])[sub 2])[sub 3]] Precursors

4. The chemical vapor deposition of SiO2 from tetraethoxysilane: The effect of the surface hydroxyl concentration

5. Mechanistic studies of dielectric thin film growth by low pressure chemical vapor deposition: The reaction of tetraethoxysilane with SiO2surfaces

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1. Si precursor inhibitors for area selective deposition of Ru;Applied Surface Science;2024-10

2. Room temperature atomic layer deposition of zinc titanium oxide using sequential adsorption of dimethyl zinc and tetrakis(dimethylamino)titanium;Japanese Journal of Applied Physics;2024-04-01

3. High wet-etch resistance SiO₂ films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane;Journal of Vacuum Science & Technology A;2022-03

4. Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy;The Journal of Physical Chemistry C;2021-11-08

5. First-principles calculations of precursor adsorption on substrate during atomic layer deposition: The example of SiO2 deposition using tris(dimethylamino)silane;Current Applied Physics;2021-11

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