Mechanistic studies of dielectric thin film growth by low pressure chemical vapor deposition: The reaction of tetraethoxysilane with SiO2surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348932
Reference29 articles.
1. Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate
2. Low Pressure Deposition of Doped SiO2 by Pyrolysis of Tetraethylorthosilicate (TEOS): I . Boron and Phosphorus Doped Films
3. Process and film characterization of low pressure tetraethylorthosilicate–borophosphosilicate glass
4. A New LPCVD Technique of Producing Borophosphosilicate Glass Films by Injection of Miscible Liquid Precursors
5. LPCVD of Borophosphosilicate Glass from Organic Reactants
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