Author:
Li Wenling,Cheng Jiangong,Zheng Zilong,Liu Qiaohong,Geng Feng,Yan Hui
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference33 articles.
1. Comparative study of ALD SiO2 thin films for optical applications;Pfeiffer;Opt. Mater. Express,2016
2. G. Baek, J. h. Baek, H. m. Kim, S. Lee, Y. Jin, H. S. Park, D.S. Kil, S. Kim, Y. Park, J.S. Park, Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications, Ceram. Int. 47 (2021) 19036-19042.
3. Theoretical understanding of the reaction mechanism of SiO2 atomic layer deposition;Fang;Chem. Mater.,2016
4. First-principles study of a full cycle of atomic layer deposition of SiO2 thin films with di(sec-butylamino)silane and ozone;Huang;J. Phys. Chem. C,2013
5. Modeling mechanism and growth reactions for new nanofabrication processes by atomic layer deposition;Elliott;Adv. Mater.,2016
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献