Directed Self-Assembly and Pattern Transfer of Five Nanometer Block Copolymer Lamellae-Reference-Cited by-同舟云学术

Directed Self-Assembly and Pattern Transfer of Five Nanometer Block Copolymer Lamellae

Published:2017-07-20 Issue:8 Volume:11 Page:7656-7665
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lane Austin P.,Yang XiaoMin¹,Maher Michael J.,Blachut Gregory²^ORCID,Asano Yusuke,Someya Yasunobu,Mallavarapu Akhila,Sirard Stephen M.²,Ellison Christopher J.³^ORCID,Willson C. Grant^ORCID

Affiliation:

1. Media Research Center, Seagate Technology, 47488 Kato Road, Fremont, California 94538, United States

2. Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538, United States

3. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States

Funder

Welch Foundation

Division of Graduate Education

Division of Engineering Education and Centers

Division of Electrical, Communications and Cyber Systems

Lam Research Corporation

Association of Science-Technology Centers

Seagate Technology PLC

Board of Regents, University of Texas System

Nissan Chemical Industries, Ltd.

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.7b02698

Reference69 articles.

1. Block Copolymer Lithography

2. Directed Block Copolymer Thin Film Self-Assembly: Emerging Trends in Nanopattern Fabrication

3. Density Multiplication and Improved Lithography by Directed Block Copolymer Assembly

4. Dense Self-Assembly on Sparse Chemical Patterns: Rectifying and Multiplying Lithographic Patterns Using Block Copolymers

5. Directed self-assembly of block copolymers for use in bit patterned media fabrication

Cited by 109 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Directed Self‐Assembly of Polystyrene‐Block‐Polyhedral Oligomeric Silsesquioxane Monolayer by Nano‐Trench for Nanopatterning;Small;2024-07-19

2. Si-Containing Reverse-Gradient Block Copolymer for Inorganic Pattern Amplification in EUV Lithography;ACS Macro Letters;2024-07-15

3. Chemically tailored block copolymers for highly reliable sub-10-nm patterns by directed self-assembly;Nature Communications;2024-07-06

4. Substrate Neutrality for Obtaining Block Copolymer Vertical Orientation;Polymers;2024-06-19

5. High χ P2PFBEMA-b-P2VP Block Copolymers Forming 6–8 nm Domains for Semiconductor Lithography;ACS Applied Materials & Interfaces;2024-06-05