High χ P2PFBEMA-<i>b</i>-P2VP Block Copolymers Forming 6–8 nm Domains for Semiconductor Lithography-Reference-Cited by-同舟云学术

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High χ P2PFBEMA-b-P2VP Block Copolymers Forming 6–8 nm Domains for Semiconductor Lithography

Published:2024-06-05 Issue:24 Volume:16 Page:31586-31596
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Mengge¹^ORCID,Xue Tao¹^ORCID,Miao Han¹,Wu Wanqing¹,Zhang Zhipeng¹,Han Muzi²,Liu Xianhe²,Li Xinxin¹^ORCID

Affiliation:

1. Key Laboratory of Specially Functional Polymeric Materials and Related Technology (Ministry of Education), School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China

2. School of Microelectronics, Fudan University, Shanghai 200433, China

Funder

Fundamental Research Funds for the Central Universities

National Integrated Circuit Innovation Center, Fudan University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c05301

Reference53 articles.

1. Morphology of Lithium-Containing Diblock Copolymer Thin Films

2. Phase Behavior of Mixtures of Block Copolymers and a Lithium Salt

3. Directed self-assembly of block copolymers on chemical patterns: A platform for nanofabrication

4. Directed self-assembly of block copolymers for next generation nanolithography

5. Directed self-assembly of block copolymers

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