Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire-Reference-Cited by-同舟云学术

Channel Length-Dependent Operation of Ambipolar Schottky-Barrier Transistors on a Single Si Nanowire

Published:2020-09-03 Issue:39 Volume:12 Page:43927-43932
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park So Jeong¹²³^ORCID,Jeon Dae-Young¹²⁴^ORCID,Sessi Violetta¹²,Trommer Jens⁵^ORCID,Heinzig André¹⁵,Mikolajick Thomas¹²,Kim Gyu-Tae³^ORCID,Weber Walter M.⁵²^ORCID

Affiliation:

1. Chair of Nanoelectronic Materials, TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany

2. Center for Advancing Electronics Dresden (CfAED), 01062 Dresden, Germany

3. School of Electrical Engineering, Korea University, Seoul 136-701, Korea

4. Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Joellabuk-do 55324, Korea

5. Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden, Germany

Funder

National Research Foundation of Korea

Deutsche Forschungsgemeinschaft

Ministry of Trade, Industry and Energy

Korea Institute of Science and Technology

Korea University

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c12595

Reference35 articles.

1. Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

2. Silicide formation in contacts to Si nanowires

3. High-performance thin-film transistors using semiconductor nanowires and nanoribbons

4. Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport

5. True Reference Nanosensor Realized with Silicon Nanowires

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