Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport-Reference-Cited by-同舟云学术

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Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport

Published:2013-08-14 Issue:9 Volume:13 Page:4176-4181
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Heinzig André¹²³,Mikolajick Thomas¹²³,Trommer Jens²,Grimm Daniel⁴⁵,Weber Walter M.²³

Affiliation:

1. Chair for Nanoelectronic Materials, TU Dresden, Nöthnitzer Strasse 64, 01187 Dresden, Germany

2. Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany

3. Center for Advancing Electronics Dresden (CfAED), TU Dresden, 01062 Dresden, Germany

4. Institute for Integrative Nanosciences, IFW Dresden, PF 270116, 01171 Dresden, Germany

5. Material Systems for Nanoelectronics, TU Chemnitz, PF 244037, 09107 Chemnitz, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl401826u

Reference39 articles.

1. Nanoelectronics from the bottom up

2. Nanowire-based one-dimensional electronics

3. Programmable nanowire circuits for nanoprocessors

4. Logic Gates and Computation from Assembled Nanowire Building Blocks

5. Single InAs/GaSb Nanowire Low-Power CMOS Inverter

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