Comprehensive Understanding of Schottky Barrier Tunneling FET Built upon Ultrathin Silicon Nanowire for Monolithic 3D Integration-Reference-Cited by-同舟云学术

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Comprehensive Understanding of Schottky Barrier Tunneling FET Built upon Ultrathin Silicon Nanowire for Monolithic 3D Integration

Published:2024-08-22 Issue:17 Volume:7 Page:20138-20144
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Hu Ruijin¹^ORCID,Liang Lei²,Zhang Shaobo¹^ORCID,Liu Zongguang¹^ORCID,Wang Junzhuan²,Yu Linwei²^ORCID

Affiliation:

1. College of Physical Science and Technology/Microelectronics Industry Research Institute, Yangzhou University, 225002 Yangzhou, P. R. China

2. School of Electronics Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, 210093 Nanjing, P. R. China

Funder

Yangzhou University

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Yangzhou City

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c02942

Reference30 articles.

1. Three-dimensional integration of two-dimensional field-effect transistors

2. Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

3. Monolithic 3D Integrated Circuits: Recent Trends and Future Prospects

4. Monolithic integration of high-voltage thin-film electronics on low-voltage integrated circuits using a solution process

5. Low-temperature (≤550 °C) p-channel Schottky barrier SOI FinFETs for monolithic 3D integration

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