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True Reference Nanosensor Realized with Silicon Nanowires

Published:2012-06-08 Issue:25 Volume:28 Page:9899-9905
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Tarasov A.¹,Wipf M.¹,Bedner K.²,Kurz J.³,Fu W.¹,Guzenko V. A.²,Knopfmacher O.¹,Stoop R. L.¹,Calame M.¹,Schönenberger C.¹

Affiliation:

1. Department of Physics, University of Basel, Basel, Switzerland,

2. Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, Villigen, Switzerland, and

3. Institut für Chemie und Bioanalytik, Fachhochschule Nordwestschweiz, Muttenz, Switzerland

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la301555r

Reference36 articles.

1. Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements

2. Thirty years of ISFETOLOGY

3. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

4. Nernst Limit in Dual-Gated Si-Nanowire FET Sensors

5. Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response

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