A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance-Reference-Cited by-同舟云学术

A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

Published:2024 Issue: Volume:12 Page:541-547
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Fuchsberger Andreas¹^ORCID,Wind Lukas¹^ORCID,Nazzari Daniele¹^ORCID,Dobler Alexandra¹,Aberl Johannes²^ORCID,Prado Navarrete Enrique²^ORCID,Brehm Moritz²^ORCID,Vogl Lilian³^ORCID,Schweizer Peter³^ORCID,Lellig Sebastian⁴,Maeder Xavier⁴,Sistani Masiar¹^ORCID,Weber Walter M.¹^ORCID

Affiliation:

1. Institute of Solid State Electronics, Technische Universität Wien, Vienna, Austria

2. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria

3. Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA

4. Laboratory for Mechanics of Materials and Nanostructures, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, Switzerland

Funder

EU under Sensoteric

Austrian Science Fund

Molecular Foundry through Atoms, an Energy Frontier Research Center

U.S. Department of Energy, Office of Science, Basic Energy Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10608155.pdf?arnumber=10608155

Reference42 articles.

1. 20 Years of reconfigurable field-effect transistors: From concepts to future applications

2. Reconfigurable Field-Effect Transistor as a Synaptic Device for XNOR Binary Neural Network

3. Reconfigurable Nanowire Transistors with Multiple Independent Gates for Efficient and Programmable Combinational Circuits

4. Security Promises and Vulnerabilities in Emerging Reconfigurable Nanotechnology-Based Circuits

5. Two-dimensional transistors with reconfigurable polarities for secure circuits