Author:
Mikolajick T.,Galderisi G.,Simon M.,Rai S.,Kumar A.,Heinzig A.,Weber W.M.,Trommer J.
Funder
German Research Foundation
DFG
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference58 articles.
1. H. C. Lin et al., in International Electron Devices Meeting 2000. Technical Digest. IEDM, Dec. 2000, pp. 857–859.
2. Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
3. H. C.Lin, et al., in 60th DRC. Conference Digest Device Research Conference, Jun. 2002, pp. 45–46.
4. The effect of random dopant fluctuations on the minimum channel length of short-channel MOS transistors
5. J. Knoch and M. R. Mueller, IEEE Trans. Nanotechnol., vol. 13(6), 2014.
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