High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring-Reference-Cited by-同舟云学术

High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring

Published:2021-04-23 Issue:17 Volume:13 Page:20277-20287
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mude Narendra Naik¹,Bukke Ravindra Naik¹^ORCID,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c21979

Reference75 articles.

1. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol–Gel Gate Dielectrics

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis

4. Fully Transparent and Rollable Electronics

5. Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers

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