High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol–Gel Gate Dielectrics-Reference-Cited by-同舟云学术

High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol–Gel Gate Dielectrics

Published:2018-01-08 Issue:3 Volume:10 Page:2679-2687
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jo Jeong-Wan¹,Kim Kwang-Ho²,Kim Jaeyoung³,Ban Seok Gyu¹^ORCID,Kim Yong-Hoon³^ORCID,Park Sung Kyu¹^ORCID

Affiliation:

1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06980, Korea

2. Korea Electronics Technology Institute, Seongnam 13509, Korea

3. School of Advanced Materials Science and Engineering, and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b10786

Reference55 articles.

1. Transparent Electronics

2. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

3. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

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