Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis-Reference-Cited by-同舟云学术

Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis

Published:2020-07-13 Issue:31 Volume:12 Page:35164-35174
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Bukke Ravindra Naik¹^ORCID,Saha Jewel Kumer¹^ORCID,Mude Narendra Naik¹,Kim Youngoo¹,Lee Suhui¹,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c05151

Reference56 articles.

1. High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol–Gel Gate Dielectrics

2. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Fully Transparent and Rollable Electronics

5. Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers

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