Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers
Author:
Affiliation:
1. School of Electrical Engineering, Korea University, 145 Anam-ro, Sungbuk-gu, Seoul 02841, Republic of Korea
Funder
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b17700
Reference33 articles.
1. Emerging memories: resistive switching mechanisms and current status
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